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High-Performance Solution-Processed Organo-Metal Halide Perovskite Unipolar Resistive Memory Devices in a Cross-Bar Array Structure
Cited 122 time in
Web of Science
Cited 117 time in Scopus
- Authors
- Issue Date
- 2019-05
- Citation
- Advanced Materials, Vol.31 No.21, p. 1804841
- Abstract
- Resistive random access memories can potentially open a niche area in memory technology applications by combining the advantages of the long endurance of dynamic random-access memory and the long retention time of flash memories. Recently, resistive memory devices based on organo-metal halide perovskite materials have demonstrated outstanding memory properties, such as a low-voltage operation and a high ON/OFF ratio; such properties are essential requirements for low power consumption in developing practical memory devices. In this study, a nonhalide lead source is employed to deposit perovskite films via a simple single-step spin-coating method for fabricating unipolar resistive memory devices in a cross-bar array architecture. These unipolar perovskite memory devices achieve a high ON/OFF ratio up to 10(8) with a relatively low operation voltage, a large endurance, and long retention times. The high-yield device fabrication based on the solution-process demonstrated here will be a step toward achieving low-cost and high-density practical perovskite memory devices.
- ISSN
- 0935-9648
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