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Memristive Switching Mechanism in Colloidal InP/ZnSe/ZnS Quantum Dot-Based Synaptic Devices for Neuromorphic Computing
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Baek, Geun Woo | - |
dc.contributor.author | Kim, Yeon Jun | - |
dc.contributor.author | Kim, Jaekwon | - |
dc.contributor.author | Chang, Jun Hyuk | - |
dc.contributor.author | Kim, Uhjin | - |
dc.contributor.author | An, Soobin | - |
dc.contributor.author | Park, Junhyeong | - |
dc.contributor.author | Yu, Sunkyu | - |
dc.contributor.author | Bae, Wan Ki | - |
dc.contributor.author | Lim, Jaehoon | - |
dc.contributor.author | Lee, Soo-Yeon | - |
dc.contributor.author | Kwak, Jeonghun | - |
dc.date.accessioned | 2024-05-20T00:38:47Z | - |
dc.date.available | 2024-05-20T00:38:47Z | - |
dc.date.created | 2024-05-16 | - |
dc.date.created | 2024-05-16 | - |
dc.date.issued | 2024-05 | - |
dc.identifier.citation | Nano Letters, Vol.24 No.19, pp.5855-5861 | - |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.uri | https://hdl.handle.net/10371/203339 | - |
dc.description.abstract | Quantum dots (QDs) have garnered a significant amount of attention as promising memristive materials owing to their size-dependent tunable bandgap, structural stability, and high level of applicability for neuromorphic computing. Despite these advantageous properties, the development of QD-based memristors has been hindered by challenges in understanding and adjusting the resistive switching (RS) behavior of QDs. Herein, we propose three types of InP/ZnSe/ZnS QD-based memristors to elucidate the RS mechanism, employing a thin poly(methyl methacrylate) layer. This approach not only allows us to identify which carriers (electron or hole) are trapped within the QD layer but also successfully demonstrates QD-based synaptic devices. Furthermore, to utilize the QD memristor as a synapse, long-term potentiation/depression (LTP/LTD) characteristics are measured, resulting in a low nonlinearity of LTP/LTD at 0.1/1. On the basis of the LTP/LTD characteristics, single-layer perceptron simulations were performed using the Extended Modified National Institute of Standards and Technology, verifying a maximum recognition rate of 91.46%. | - |
dc.language | 영어 | - |
dc.publisher | American Chemical Society | - |
dc.title | Memristive Switching Mechanism in Colloidal InP/ZnSe/ZnS Quantum Dot-Based Synaptic Devices for Neuromorphic Computing | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/acs.nanolett.4c01083 | - |
dc.citation.journaltitle | Nano Letters | - |
dc.identifier.wosid | 001226247300001 | - |
dc.identifier.scopusid | 2-s2.0-85192255395 | - |
dc.citation.endpage | 5861 | - |
dc.citation.number | 19 | - |
dc.citation.startpage | 5855 | - |
dc.citation.volume | 24 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Yu, Sunkyu | - |
dc.contributor.affiliatedAuthor | Lee, Soo-Yeon | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordAuthor | memristors | - |
dc.subject.keywordAuthor | neuromorphic | - |
dc.subject.keywordAuthor | quantum dots | - |
dc.subject.keywordAuthor | resistive switching mechanism | - |
dc.subject.keywordAuthor | synaptic device | - |
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- College of Engineering
- Department of Electrical and Computer Engineering
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