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In-plane anisotropic two-dimensional materials for twistronics

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Authors

Kim, Hangyel; Kim, Changheon; Jung, Yeonwoong; Kim, Namwon; Son, Jangyup; Lee, Gwan-Hyoung

Issue Date
2024-06
Publisher
Institute of Physics Publishing
Citation
Nanotechnology, Vol.35 No.26, p. 262501
Abstract
In-plane anisotropic two-dimensional (2D) materials exhibit in-plane orientation-dependent properties. The anisotropic unit cell causes these materials to show lower symmetry but more diverse physical properties than in-plane isotropic 2D materials. In addition, the artificial stacking of in-plane anisotropic 2D materials can generate new phenomena that cannot be achieved in in-plane isotropic 2D materials. In this perspective we provide an overview of representative in-plane anisotropic 2D materials and their properties, such as black phosphorus, group IV monochalcogenides, group VI transition metal dichalcogenides with 1T ' and T-d phases, and rhenium dichalcogenides. In addition, we discuss recent theoretical and experimental investigations of twistronics using in-plane anisotropic 2D materials. Both in-plane anisotropic 2D materials and their twistronics hold considerable potential for advancing the field of 2D materials, particularly in the context of orientation-dependent optoelectronic devices.
ISSN
0957-4484
URI
https://hdl.handle.net/10371/203429
DOI
https://doi.org/10.1088/1361-6528/ad2c53
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  • College of Engineering
  • Department of Materials Science & Engineering
Research Area 2D materials, 2차원 물질, Smiconductor process, semiconductor devices, 반도체 공정, 반도체 소자

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