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Van der Waals Epitaxially Grown Molecular Crystal Dielectric Sb2O3 for 2D Electronics

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Authors

Ryu, Huije; Kim, Hyunjun; Jeong, Jae Hwan; Kim, Byeong Chan; Watanabe, Kenji; Taniguchi, Takashi; Lee, Gwan-Hyoung

Issue Date
2024-05
Publisher
American Chemical Society
Citation
ACS Nano, Vol.18 No.20, pp.13098-13105
Abstract
Two-dimensional (2D) semiconducting materials have attracted significant interest as promising candidates for channel materials owing to their high mobility and gate tunability at atomic-layer thickness. However, the development of 2D electronics is impeded due to the difficulty in formation of high-quality dielectrics with a clean and nondestructive interface. Here, we report the direct van der Waals epitaxial growth of a molecular crystal dielectric, Sb2O3, on 2D materials by physical vapor deposition. The grown Sb2O3 nanosheets showed epitaxial relations of 0 and 180° with the 2D template, maintaining high crystallinity and an ultrasharp vdW interface with the 2D materials. As a result, the Sb2O3 nanosheets exhibited a high breakdown field of 18.6 MV/cm for 2L Sb2O3 with a thickness of 1.3 nm and a very low leakage current of 2.47 × 10-7 A/cm2 for 3L Sb2O3 with a thickness of 1.96 nm. We also observed two types of grain boundaries (GBs) with misorientation angles of 0 and 60°. The 0°-GB with a well-stitched boundary showed higher electrical and thermal stabilities than those of the 60°-GB with a disordered boundary. Our work demonstrates a method to epitaxially grow molecular crystal dielectrics on 2D materials without causing any damage, a requirement for high-performance 2D electronics.
ISSN
1936-0851
URI
https://hdl.handle.net/10371/203510
DOI
https://doi.org/10.1021/acsnano.4c01883
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  • College of Engineering
  • Department of Materials Science & Engineering
Research Area 2D materials, 2차원 물질, Smiconductor process, semiconductor devices, 반도체 공정, 반도체 소자

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