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Monolayer graphene mode-locked 63-fs Ti:sapphire laser

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Authors

Kim, Jun Wan; Baek, In Hyung; Lee, Hwang Woon; Bae, Sukang; Hong, Byung Hee; Ahn, Yeong Hwan; Yeom, Dong Il; Rotermund, Fabian

Issue Date
2012-07
Publisher
Institute of Electrical and Electronics Engineers Inc.
Citation
Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012, pp.673-674
Abstract
Passive mode-locking of a Ti:sapphire laser employing monolayer graphene as saturable absorber was demonstrated for the first time. The large-area, high-quality monolayer graphene was fabricated by chemical vapor deposition method. Without any additional treatment, monolayer graphene shows ultrafast recovery time and nonlinear absorption properties appropriate for the bulk laser mode-locking near 800 nm. The graphene mode-locked Ti:sapphire laser delivers 63-fs pulses with a maximum output power of 480 mW. © 2012 IEEE.
ISSN
0000-0000
URI
https://hdl.handle.net/10371/204649
DOI
https://doi.org/10.1109/OECC.2012.6276785
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  • College of Natural Sciences
  • Department of Chemistry
Research Area Nanofabrication and characterization, Nanomaterials Synthesis, Quantum mechanics and molecular dynamics simulation, 나노재료 합성, 나노제조 및 특성화, 양자역학 및 분자역학 시뮬레이션

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