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Showing results 1 to 7 of 7

Issue DateTitle / Author(s) / CitationFileAltmetrics
2015-07
Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage
DOI
2016-11
Two-Dimensional Semiconductor Optoelectronics Based on van der Waals Heterostructures

Lee, Jae Yoon; Shin, Jun-Hwan; Lee, Gwan-Hyoung; Lee, Chul-Ho

Nanomaterials, Vol.6 No.11, p. 193

DOI
2018-09
Photovoltaic Field-Effect Transistors Using a MoS2 and Organic Rubrene van der Waals Hybrid

Park, Cheol-Joon; Park, Hyeon Jung; Lee, Jae Yoon; Kim, Jeongyong; Lee, Chul-Ho; Joo, Jinsoo

ACS Applied Materials & Interfaces, Vol.10 No.35, pp.29848-29856

DOI
2020-05
Temperature dependence of optical properties of monolayer WS2 by spectroscopic ellipsometry
DOI
2021-09
The Schottky–Mott Rule Expanded for Two-Dimensional Semiconductors: Influence of Substrate Dielectric Screening
DOI
2022-10
Molecular Van Der Waals Heterojunction Photodiodes Enabling Dipole-Induced Polarity Switching
DOI
2022-12
Bowing-alleviated continuous bandgap engineering of wafer-scale WS2xSe2(1-x) monolayer alloys and their assembly into hetero-multilayers
DOI
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