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Showing results 1 to 6 of 6

Issue Date	Title / Author(s) / Citation	File	Altmetrics
2016-04	Diode-type NAND flash memory cell string having super-steep switching slope based on positive feedback Joe, Sung-Min; Kang, Ho-Jung; Choi, Nagyong; Kang, Myounggon; Park, Byung-Gook; Lee, Jong-Ho IEEE Transactions on Electron Devices, Vol.63 No.4, pp.1533-1538	DOI
2016-07	Improvement of Characteristics with a Sub-5 nm Ge-Doped Silicon Nitride Layer in Charge Trap Flash Memory Cells Li, Dong Hua; Kim, Wandong; Shim, Won Bo; Park, Se Hwan; Kim, Yoon; Lee, Gil Sung; Kim, Doo-Hyun; Lee, Jung Hoon; Yun, Jang-Gn; Cho, Seongjae; Park, Il Han; Lee, Jong-Ho; Shin, Hyungcheol; Park, Byung-Gook Nanoscience and Nanotechnology Letters, Vol.8 No.7, pp.577-580	DOI
2016-08	A 1T-DRAM cell based on a tunnel field-effect transistor with highly-scalable pillar and surrounding gate structure Kim, Hyungjin; Park, Byung-Gook Journal of the Korean Physical Society, Vol.69 No.3, pp.323-327	DOI
2016-08	Asymmetric dual-gate-structured one-transistor dynamic random access memory cells for retention characteristics improvement Kim, Hyungjin; Lee, Jong-Ho; Park, Byung-Gook Applied Physics Express, Vol.9 No.8, pp.084201-084201	DOI
2016-09	Novel program method of string select transistors for layer selection in channel-stacked NAND flash memory Kwon, Dae Woong; Kim, Wandong; Kim, Do-Bin; Lee, Sang-Ho; Seo, Joo Yun; Choi, Eunseok; Cho, Gyu Seog; Park, Sung-Kye; Lee, Jong-Ho; Park, Byung-Gook IEEE Transactions on Electron Devices, Vol.63 No.9, pp.3521-3526	DOI
2018-08	Dual Functions of V/SiOx/AlOy/p++Si Device as Selector and Memory Kim, Sungjun; Lin, Chih-Yang; Kim, Min-Hwi; Kim, Tae-Hyeon; Kim, Hyungjin; Chen, Ying-Chen; Chang, Yao-Feng; Park, Byung-Gook Nanoscale Research Letters, 13(1):252	view file DOI

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