Browse

Dual Functions of V/SiOx/AlOy/p++Si Device as Selector and Memory

Cited 10 time in Web of Science Cited 10 time in Scopus
Authors
Kim, Sungjun; Lin, Chih-Yang; Kim, Min-Hwi; Kim, Tae-Hyeon; Kim, Hyungjin; Chen, Ying-Chen; Chang, Yao-Feng; Park, Byung-Gook
Issue Date
2018-08-23
Publisher
Springer Open
Citation
Nanoscale Research Letters, 13(1):252
Keywords
Resistive switchingSelectorMemoryNonlinearitySilicon oxideVanadium
Abstract
This letter presents dual functions including selector and memory switching in a V/SiOx/AlOy/p++Si resistive memory device by simply controlling compliance current limit (CCL). Unidirectional threshold switching is observed after a positive forming with low CCL of 1 μA. The shifts to the V-electrode side of the oxygen form the VOx layer, where the threshold switching can be explained by the metal-insulation-transition phenomenon. For higher CCL (30 μA) applied to the device, a bipolar memory switching is obtained, which is attributed to formation and rupture of the conducting filament in SiOy layer. 1.5-nm-thick AlOy layer with high thermal conductivity plays an important role in lowering the off-current for memory and threshold switching. Through the temperature dependence, high-energy barrier (0.463 eV) in the LRS is confirmed, which can cause nonlinearity in a low-resistance state. The smaller the CCL, the higher the nonlinearity, which provides a larger array size in the cross-point array. The coexistence of memory and threshold switching in accordance with the CCL provides the flexibility to control the device for its intended use.
ISSN
1556-276X
Language
English
URI
https://hdl.handle.net/10371/143542
DOI
https://doi.org/10.1186/s11671-018-2660-9
Files in This Item:
Appears in Collections:
College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Journal Papers (저널논문_전기·정보공학부)
  • mendeley

Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse