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전기적으로 유도된 터널 장벽을 가지는 단전자 트랜지스터의 특성에 관한 연구
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- Authors
- Advisor
- 박병국
- Issue Date
- 2001
- Publisher
- 서울대학교 대학원
- Keywords
- 단전자 트랜지스터 ; Silicon On Insulator ; 이중 게이트(side gate) ; 전류 진동 ; 쿨룸 갭(coulomb gap) ; e-beam irregularity ; sidewall lithography ; Single electron transistor ; SOI(Silicon On Insulator) ; side-gate oscillation period ; Coulomb gap ; the irregularity of e-beam lithography ; sidewall lithography
- Description
- 학위논문(석사)--서울대학교 대학원 :전기.컴퓨터공학부,2001.
- Language
- Korean
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000065384
https://hdl.handle.net/10371/31034
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