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Metallorganic chemical vapor deposition(MOCVD) of tantalum oxynitride(TaOxNy) as a high k dielectric material for next generation devices : 고유전물질로서 화학기상증착법으로 증착된 탄탈륨 질산화막에 대한 연구
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- Authors
- Advisor
- 김기범
- Issue Date
- 2002
- Publisher
- 서울대학교 대학원
- Description
- Thesis (doctoral)--서울대학교 대학원 :재료공학부,2002.
- Language
- English
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000060779
https://hdl.handle.net/10371/35437
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