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Metallorganic chemical vapor deposition(MOCVD) of tantalum oxynitride(TaOxNy) as a high k dielectric material for next generation devices
고유전물질로서 화학기상증착법으로 증착된 탄탈륨 질산화막에 대한 연구

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Authors
조성래
Advisor
김기범
Issue Date
2002
Publisher
서울대학교 대학원
Description
Thesis (doctoral)--서울대학교 대학원 :재료공학부,2002.
Language
English
URI
http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000060779

https://hdl.handle.net/10371/35437
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Materials Science and Engineering (재료공학부)Theses (Ph.D. / Sc.D._재료공학부)
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