UHV-CVD와 UHV-ECRCVD를 利用한 多結晶 Si[1-x]Ge[x] 薄膜의 蒸着에 관한 硏究

박진원

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S-Space College of Engineering/Engineering Practice School (공과대학/대학원) Dept. of Materials Science and Engineering (재료공학부) Theses (Ph.D. / Sc.D._재료공학부)

UHV-CVD와 UHV-ECRCVD를 利用한 多結晶 Si[1-x]Ge[x] 薄膜의 蒸着에 관한 硏究 : A Study on the polycrystalline Si[1-x]Ge[x] thin films grown by ultrahigh vacuum chemical vapor deposition and ultrahigh vacuum electron cyclotron resonance chemical vapor deposition

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Authors: 박진원

Advisor: 윤의준

Issue Date: 2001

Publisher: 서울대학교 대학원

Keywords: 게이트 ; UHV-CVD ; MOS캐패시터 ; UHV-ECRCVD ; UHV-CVD ; gate ; 다결정 SiGe ; polycrystalline SiGe ; MOs capacitor

Description: 학위논문(박사)--서울대학교 대학원 :재료공학부,2001.

Language: Korean

URI: http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000063457

https://hdl.handle.net/10371/35509

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Appears in Collections:: College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Materials Science and Engineering (재료공학부)Theses (Ph.D. / Sc.D._재료공학부)

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