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UHV-CVD와 UHV-ECRCVD를 利用한 多結晶 Si[1-x]Ge[x] 薄膜의 蒸着에 관한 硏究 : A Study on the polycrystalline Si[1-x]Ge[x] thin films grown by ultrahigh vacuum chemical vapor deposition and ultrahigh vacuum electron cyclotron resonance chemical vapor deposition
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- Authors
- Advisor
- 윤의준
- Issue Date
- 2001
- Publisher
- 서울대학교 대학원
- Keywords
- 게이트 ; UHV-CVD ; MOS캐패시터 ; UHV-ECRCVD ; UHV-CVD ; gate ; 다결정 SiGe ; polycrystalline SiGe ; MOs capacitor
- Description
- 학위논문(박사)--서울대학교 대학원 :재료공학부,2001.
- Language
- Korean
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000063457
https://hdl.handle.net/10371/35509
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