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UHV-CVD와 UHV-ECRCVD를 利用한 多結晶 Si[1-x]Ge[x] 薄膜의 蒸着에 관한 硏究
A Study on the polycrystalline Si[1-x]Ge[x] thin films grown by ultrahigh vacuum chemical vapor deposition and ultrahigh vacuum electron cyclotron resonance chemical vapor deposition

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Authors
박진원
Advisor
윤의준
Issue Date
2001
Publisher
서울대학교 대학원
Keywords
게이트UHV-CVDMOS캐패시터UHV-ECRCVDUHV-CVDgate다결정 SiGepolycrystalline SiGeMOs capacitor
Description
학위논문(박사)--서울대학교 대학원 :재료공학부,2001.
Language
Korean
URI
http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000063457

https://hdl.handle.net/10371/35509
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Materials Science and Engineering (재료공학부)Theses (Ph.D. / Sc.D._재료공학부)
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