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유기금속 화학기상 증착법으로 Si기판에 형성한 Hf-기반 게이트 유전막의 성장 및 특성향상에 관한 연구
Study of growth and characteristics enhancement of Hf-based gate dielectrics deposited by metal organic chemical vapor deposition

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Authors
이석우
Advisor
황철성
Issue Date
2005
Publisher
서울대학교 대학원
Keywords
HfO2Hf-silicategate oxideCVD
Description
학위논문(석사)--서울대학교 대학원 :협동과정 나노과학기술전공,2005.
Language
Korean
URI
http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000050837

https://hdl.handle.net/10371/43556
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College of Engineering/Engineering Practice School (공과대학/대학원)Nano-Science and Technology (협동과정 나노과학·기술전공)Theses (Master's Degree_협동과정 나노과학·기술전공)
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