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이온 주입을 통한 ALGaNGaN HEMT의 항복전압 향상 효과
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- Authors
- Advisor
- 한민구
- Issue Date
- 2008
- Publisher
- 서울대학교 대학원
- Keywords
- GaN ; GaN ; AlGaN ; AlGaN ; HEMT ; proton ; 양성자 ; fluoride plasma ; fluoride 플라즈마 ; SiO2 ; SiO2 ; passivation ; 패시베이션
- Description
- 학위논문(석사) --서울대학교 대학원 :전기. 컴퓨터공학부,2008.8
- Language
- Korean
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000042248
https://hdl.handle.net/10371/45041
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