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이온 주입을 통한 ALGaNGaN HEMT의 항복전압 향상 효과

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Authors
조규헌
Advisor
한민구
Issue Date
2008
Publisher
서울대학교 대학원
Keywords
GaNGaNAlGaNAlGaNHEMTproton양성자fluoride plasmafluoride 플라즈마SiO2SiO2passivation패시베이션
Description
학위논문(석사) --서울대학교 대학원 :전기. 컴퓨터공학부,2008.8
Language
Korean
URI
http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000042248

https://hdl.handle.net/10371/45041
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Theses (Master's Degree_전기·정보공학부)
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