Stress gradient relaxation and property modification of polysilicon films by ion implantation

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Stress gradient relaxation and property modification of polysilicon films by ion implantation

DC Field	Value	Language
dc.contributor.advisor	김용협	-
dc.contributor.author	석지원	-
dc.date.accessioned	2010-01-27T15:20:42Z	-
dc.date.available	2010-01-27T15:20:42Z	-
dc.date.copyright	2003.	-
dc.date.issued	2003	-
dc.identifier.uri	http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000059897	eng
dc.identifier.uri	https://hdl.handle.net/10371/45649	-
dc.description	Thesis (master`s)--서울대학교 대학원 :기계항공공학부,2003.	en
dc.format.extent	viii, 44 leaves	en
dc.language.iso	en	en
dc.publisher	서울대학교 대학원	en
dc.subject	MEMS	en
dc.subject	Mems	en
dc.subject	이온 주입	en
dc.subject	Ion implantation	en
dc.subject	응력 구배	en
dc.subject	Stress gradient	en
dc.subject	다결정 실리콘	en
dc.subject	Polysilicon	en
dc.subject	표면 미세 가공	en
dc.subject	Surface micromachining	en
dc.subject	비결정질 실리콘	en
dc.subject	Amorphous silicon	en
dc.subject	nano-indentation	en
dc.subject	Nano-indentation	en
dc.subject	탄성계수	en
dc.subject	Elastic modulus	en
dc.subject	경도	en
dc.subject	Hardness	en
dc.subject	표면 거칠기	en
dc.subject	Roughness	en
dc.title	Stress gradient relaxation and property modification of polysilicon films by ion implantation	en
dc.type	Thesis	-
dc.contributor.department	기계항공공학부	-
dc.description.degree	Master	en

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