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3D Simulation study of fluctuation phenomena in MOSFET I-V characteristics induced by a single trapped charge in SiO2 layer : 산화막내 단일전자트랩에 기인한 MOSFET 전류특성 변동의 3차원 시뮬레이션 연구
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 민홍식 | - |
| dc.contributor.author | 백창기 | - |
| dc.date.accessioned | 2010-01-29T06:13:39Z | - |
| dc.date.available | 2010-01-29T06:13:39Z | - |
| dc.date.copyright | 2008. | - |
| dc.date.issued | 2008 | - |
| dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000041612 | eng |
| dc.identifier.uri | https://hdl.handle.net/10371/46932 | - |
| dc.description | Thesis(doctors) --서울대학교 대학원 :전기. 컴퓨터공학부, 2008.8 | en |
| dc.format.extent | ix, 65 leaves | en |
| dc.language.iso | en | en |
| dc.publisher | 서울대학교 대학원 | en |
| dc.subject | Random Telegraph Signal (RTS) | en |
| dc.subject | Random Telegraph Signal (RTS) | en |
| dc.subject | Discrete Dopant Fluctuation (DDF) | en |
| dc.subject | Discrete Dopant Fluctuation (DDF) | en |
| dc.subject | Probability distribution of oxide trap charges | en |
| dc.subject | Probability distribution of oxide trap charges | en |
| dc.subject | 3D device simulation | en |
| dc.subject | 3D device simulation | en |
| dc.subject | Density-Gradient model | en |
| dc.subject | Density-Gradient model | en |
| dc.title | 3D Simulation study of fluctuation phenomena in MOSFET I-V characteristics induced by a single trapped charge in SiO2 layer | en |
| dc.title.alternative | 산화막내 단일전자트랩에 기인한 MOSFET 전류특성 변동의 3차원 시뮬레이션 연구 | en |
| dc.type | Thesis | - |
| dc.contributor.department | 전기. 컴퓨터공학부 | - |
| dc.description.degree | Doctor | en |
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