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3D Simulation study of fluctuation phenomena in MOSFET I-V characteristics induced by a single trapped charge in SiO2 layer : 산화막내 단일전자트랩에 기인한 MOSFET 전류특성 변동의 3차원 시뮬레이션 연구
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- Authors
- Advisor
- 민홍식
- Issue Date
- 2008
- Publisher
- 서울대학교 대학원
- Keywords
- Random Telegraph Signal (RTS) ; Random Telegraph Signal (RTS) ; Discrete Dopant Fluctuation (DDF) ; Discrete Dopant Fluctuation (DDF) ; Probability distribution of oxide trap charges ; Probability distribution of oxide trap charges ; 3D device simulation ; 3D device simulation ; Density-Gradient model ; Density-Gradient model
- Description
- Thesis(doctors) --서울대학교 대학원 :전기. 컴퓨터공학부, 2008.8
- Language
- English
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000041612
https://hdl.handle.net/10371/46932
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