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Characterization and fabrication of nanocrystalline silicon thin film transistors fabricated at 200℃ : 200 度에서 制作된 微細結晶 실리콘 薄膜 트랜지스터 制作 및 特性에 관한 硏究
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- Authors
- Advisor
- 한민구
- Issue Date
- 2008
- Publisher
- 서울대학교 대학원
- Keywords
- 미세 결정 실리콘 ; nanocrystalline silicon (nc-Si) ; 박막 트랜지스터 ; thin film transistor (TFT) ; 유도 결합 플라즈마 화학 기상 증착 ; inductively coupled plasma chemical vapor deposition (ICP-CVD) ; 부화층 ; incubation layer ; 누설 전류 ; leakage current ; 전계 효과 이동도 ; field effect mobility
- Description
- Thesis(doctors)--서울대학교 대학원 :전기. 컴퓨터공학부,2008.2.
- Language
- English
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000039600
https://hdl.handle.net/10371/48438
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