S-Space College of Natural Sciences (자연과학대학) Dept. of Physics and Astronomy (물리·천문학부) Physics (물리학전공) Journal Papers (저널논문_물리학전공)
Heteroepitaxal fabrication and structural characterization of ultrafine GaN/ZnO coaxial nanorod heterostructures
- An, Sung Jin; Park, Won Il; Yi, Gyu-Chul; Kim, Yong-Jin; Kang, Hee-Bok; Kim, Miyoung
- Issue Date
- American Institute of Physics
- Appl. Phys. Lett. 84, 3612 (2004)
- We report on heteroepitaxial fabrication and structural characterizations of ultrafine GaN/ZnO coaxial nanorod heterostructures. The coaxial nanorod heterostructures were fabricated by epitaxial growth of a GaN layer on ultrafine ZnO nanorods. Epitaxial growth and precise control of GaN overlayer thickness were obtained by low pressure metalorganic vapor-phase epitaxy. ZnO nanorods grown on Si and sapphire substrates using catalyst-free metalorganic chemical vapor deposition exhibited diameters as small as 7 nm. Furthermore, structural properties of the coaxial nanorod heterostructures were investigated using both synchrotron-radiation x-ray diffraction and high resolution transmission electron microscopy. (C) 2004 American Institute of Physics.
- 0003-6951 (print)