Publications
Detailed Information
Heteroepitaxal fabrication and structural characterization of ultrafine GaN/ZnO coaxial nanorod heterostructures
Cited 58 time in
Web of Science
Cited 65 time in Scopus
- Authors
- Issue Date
- 2004-05-03
- Publisher
- American Institute of Physics
- Citation
- Appl. Phys. Lett. 84, 3612 (2004)
- Keywords
- CORE-SHELL ; NITRIDE ; GROWTH ; GAN
- Abstract
- We report on heteroepitaxial fabrication and structural characterizations of ultrafine GaN/ZnO coaxial nanorod heterostructures. The coaxial nanorod heterostructures were fabricated by epitaxial growth of a GaN layer on ultrafine ZnO nanorods. Epitaxial growth and precise control of GaN overlayer thickness were obtained by low pressure metalorganic vapor-phase epitaxy. ZnO nanorods grown on Si and sapphire substrates using catalyst-free metalorganic chemical vapor deposition exhibited diameters as small as 7 nm. Furthermore, structural properties of the coaxial nanorod heterostructures were investigated using both synchrotron-radiation x-ray diffraction and high resolution transmission electron microscopy. (C) 2004 American Institute of Physics.
- ISSN
- 0003-6951 (print)
1077-3118 (online)
- Language
- English
- Files in This Item:
Item View & Download Count
Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.