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BAVI-cell : a high-speed nanoscale SONOS memory with band-to-band tunneling initiated avalanche injection Mechanism : 밴드간 터널링으로 유도된 沙汰 주입 원리에 의한 고속 SONOS 메모리 소자

DC Field Value Language
dc.contributor.advisor박병국-
dc.contributor.author심재성-
dc.date.accessioned2010-02-02T16:07:08Z-
dc.date.available2010-02-02T16:07:08Z-
dc.date.copyright2005-
dc.date.issued2005-
dc.identifier.other000000050125-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000050125-
dc.descriptionThesis(doctoral)--서울대학교 대학원 :전기컴퓨터공학부,2005.-
dc.format.extentvii, 124 p.-
dc.language.isoen-
dc.publisher서울대학교 대학원-
dc.subjectCMOS VLSI 기술-
dc.subjectCMOS VLSI technology-
dc.subject비휘발성 메모리-
dc.subjectnonvolatile memory-
dc.subject플래시 메모리-
dc.subjectflash memory-
dc.subject소노스 (SONOS)-
dc.subjectSONOS-
dc.subject플로팅 게이트 메모리-
dc.subjectFLOTOX-
dc.subject질화막-
dc.subjectsilicon nitride-
dc.subject핫 캐리어 주입-
dc.subjectfloating gate-
dc.subject핫 홀-
dc.subjecthot-carrier injection-
dc.subject홀 터널링-
dc.subjecthot-hole-
dc.subject사태 (沙汰-
dc.subjecthole tunneling-
dc.subjectavalanche)-
dc.subjectavalanche-
dc.subject밴드간 터널링-
dc.subjectband-to-band tunneling-
dc.subject지우기 속도-
dc.subjecterase speed-
dc.subject전하 분포-
dc.subjectcharge distribution-
dc.subjectp-채널 MOSFET-
dc.subjectp-channel MOSFET-
dc.subjectBAVI 셀-
dc.subjectBAVI-
dc.titleBAVI-cell : a high-speed nanoscale SONOS memory with band-to-band tunneling initiated avalanche injection Mechanism-
dc.title.alternative밴드간 터널링으로 유도된 沙汰 주입 원리에 의한 고속 SONOS 메모리 소자-
dc.typeThesis-
dc.contributor.department전기컴퓨터공학부-
dc.description.degreeThesis(doctoral)---
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