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Fabrication and electrical characteristics of high-performance ZnO nanorod field-effect transistors
Cited 373 time in
Web of Science
Cited 395 time in Scopus
- Authors
- Issue Date
- 2004-11-22
- Publisher
- American Institute of Physics
- Citation
- Appl. Phys. Lett. 85, 5052 (2004)
- Abstract
- We report on fabrication and electrical characteristics of high-mobility field-effect transistors (FETs) using ZnO nanorods. For FET fabrications, single-crystal ZnO nanorods were prepared using catalyst-free metalorganic vapor phase epitaxy. Although typical ZnO nanorod FETs exhibited good electrical characteristics, with a transconductance of similar to140 nS and a mobility of 75 cm(2)/V s, the device characteristics were significantly improved by coating a polyimide thin layer on the nanorod surface, exhibiting a large turn-ON/OFF ratio of 10(4)-10(5), a high transconductance of 1.9 muS, and high electron mobility above 1000 cm(2)/V s. The role of the polymer coating in the enhancement of the devices is also discussed. (C) 2004 American Institute of Physics.
- ISSN
- 0003-6951 (print)
1077-3118 (online)
- Language
- English
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