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Ferromagnetic properties of Zn1-xMgxO epitaxial films
Cited 549 time in
Web of Science
Cited 578 time in Scopus
- Authors
- Issue Date
- 2002-06-17
- Publisher
- American Institute of Physics
- Citation
- Appl. Phys. Lett. 80, 4561 (2002)
- Keywords
- MAGNETIC SEMICONDUCTORS ; DOPED ZNO
- Abstract
- We report on ferromagnetic characteristics of Zn1-xMnxO (x=0.1 and 0.3) thin films grown on Al2O3(00.1) substrates using laser molecular-beam epitaxy. By increasing the Mn content, the films exhibited increases in both the c-axis lattice constant and fundamental band gap energy. The Curie temperature obtained from temperature-dependent magnetization curves was 45 K for the film with x=0.3, depending on the Mn composition in the films. The remanent magnetization and coercive field of Zn0.9Mn0.1O at 5 K were 0.9 emu/g and 300 Oe, respectively. For Zn0.7Mn0.3O, the remanent magnetization at 5 K increased to 3.4 emu/g. (C) 2002 American Institute of Physics.
- ISSN
- 0003-6951 (print)
1077-3118 (online)
- Language
- English
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