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열산화법으로 형성된 N₂O 게이트 산화막의 전기적 특성 및 MOSFET 응용 연구 : Electrical characterization of the furanace-grown N₂O gate oxide and its application for MOSFETs
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- Authors
- Advisor
- 김형준
- Issue Date
- 1996
- Publisher
- 서울대학교 대학원
- Keywords
- 열산화막 ; thermal oxide ; 게이트 산화막 ; gate oxide ; 신뢰성 ; reliability ; 표면채널형 MOSFET ; surface-channel MOSFET ; MOS 커패시터 ; MOS capacitor
- Description
- 학위논문(박사)--서울대학교 대학원 :무기재료공학과,1996.
- Language
- Korean
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000081613
https://hdl.handle.net/10371/50804
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