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ICPCVD SiNx passivation을 이용한 GaAs metamorphic HEMT 소자의 DC 특성 개선에 관한 연구
(A)study on the DC characteristics improvement of GaAs metamorphic HEMTs using ICPCVD SiNx passivation

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Authors
김동환
Advisor
서광석
Issue Date
2007
Publisher
서울대학교 대학원
Keywords
Metamorphic HEMTremote ICPCVDconformalDPLcutoff frequency(fT)maximum oscillation frequency(fmax)
Description
학위논문(석사) --서울대학교 대학원 :전기. 컴퓨터공학부,2007.
Language
Korean
URI
http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000043858

https://hdl.handle.net/10371/52482
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Theses (Master's Degree_전기·정보공학부)
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