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Material issues for nanoporous ultra low-k dielectrics

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Authors
Char, Kookheon; Cha, Bong Jun; Kim, Suhan
Issue Date
2004-06-07
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Proceedings of the IEEE 2004 International Interconnect Technology Conference 2004, 219
Abstract
Using the molecularly designed porogen (pore generating agent) approach, novel nanoporous low-k materials with improved mechanical properties have been achieved based on poly(methylsilsesquioxane), PMSSQ, structure. Two different methods, microphase separation system and grafted porogen system, were adopted to realize nonporous ultra low-k dielectrics with superior mechanical properties. We found that the behavior of dielectric constant as well as thin film modulus depends on the molecular structure of a porogen. Within the decomposition temperature windows of grafted porogens, a low-k material with k < 2.2 and Young's modulus > 6 Gpa was achieved. These results indicate that it is possible to design and fabricate nanoporous thin films with balanced low dielectric constant and robust mechanical properties, which are highly desired for microelectronic industry.
Language
English
URI
http://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=29623&arnumber=1345753

http://hdl.handle.net/10371/5852
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Chemical and Biological Engineering (화학생물공학부)Journal Papers (저널논문_화학생물공학부)
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