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Residual Stress Behavior in Methylsilsesquioxane-Based Dielectric Thin Films
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Oh, W. | - |
| dc.contributor.author | Shin, T.J. | - |
| dc.contributor.author | Ree, M. | - |
| dc.contributor.author | Jin, M.Y. | - |
| dc.contributor.author | Char, K. | - |
| dc.date.accessioned | 2009-07-28 | - |
| dc.date.available | 2009-07-28 | - |
| dc.date.issued | 2001-10-01 | - |
| dc.identifier.citation | Mol. Cryst. Liq. Cryst., 371, 397 | en |
| dc.identifier.issn | 1542-1406 (print) | - |
| dc.identifier.issn | 1563-5287 (online) | - |
| dc.identifier.uri | https://hdl.handle.net/10371/5856 | - |
| dc.description.abstract | Residual stress of methylsilsequioxane film, which was spin-coated on silicon substrate and followed by soft-baking, was measured in-situ during curing and subsequent cooling with varying processing conditions. The thickness and refractive index of the cured films were measured using ellipsometry. Their structure was also examined by X-ray diffraction. | en |
| dc.language.iso | en | - |
| dc.publisher | Taylor & Francis | en |
| dc.subject | methylsilsesquioxane | en |
| dc.subject | thin film | en |
| dc.subject | low dielectric | en |
| dc.subject | residual stress | en |
| dc.subject | thermal stress | en |
| dc.subject | refractive index | en |
| dc.subject | crack | en |
| dc.subject | craze | en |
| dc.subject | X-ray diffraction | en |
| dc.title | Residual Stress Behavior in Methylsilsesquioxane-Based Dielectric Thin Films | en |
| dc.type | Article | en |
| dc.contributor.AlternativeAuthor | 차국헌 | - |
| dc.identifier.doi | 10.1080/10587250108024768 | - |
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