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Relationship between indium tin oxide surface treatment and hole injection in C60 modified devices
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Sung Hyun | - |
| dc.contributor.author | Jang, Jyongsik | - |
| dc.contributor.author | Lee, Jun Yeob | - |
| dc.date.accessioned | 2010-03-24T08:19:07Z | - |
| dc.date.available | 2010-03-24T08:19:07Z | - |
| dc.date.issued | 2006 | - |
| dc.identifier.citation | Applied Physics Letters 89, 253501 | en |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.uri | https://hdl.handle.net/10371/61899 | - |
| dc.description.abstract | The effect of indium tin oxide (ITO) surface treatment on hole injection in organic light-emitting
diode with C60 as a buffer layer on ITO was studied. Double surface dipole layer was induced on oxygen plasma treated ITO surface, while no dipole formation was observed on ITO without surface treatment. Interfacial energy barrier between ITO and hole transport layer was reduced by 0.4 eV by C60 modification on oxygen plasma treated ITO surface, while there was no change of interfacial energy barrier by C60 on ITO without surface treatment. | en |
| dc.language.iso | en | en |
| dc.publisher | American Institute of Physics | en |
| dc.title | Relationship between indium tin oxide surface treatment and hole injection in C60 modified devices | en |
| dc.type | Article | en |
| dc.contributor.AlternativeAuthor | 김성현 | - |
| dc.contributor.AlternativeAuthor | 장정식 | - |
| dc.contributor.AlternativeAuthor | 이준엽 | - |
| dc.identifier.doi | 10.1063/1.2410224 | - |
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