S-Space College of Engineering/Engineering Practice School (공과대학/대학원) Dept. of Mechanical Aerospace Engineering (기계항공공학부) Journal Papers (저널논문_기계항공공학부)
Effect of processing conditions on the growth of strained Si1-xGex layers on Si
- Suh, K. Y.; Lee, Hong H.
- Issue Date
- American Institute of Physics
- J. Appl. Phys. 84, 2361 (1998)
- We investigate several factors that determine the surface morphology in heteroepitaxial growth of Si1-xGex films on Si, which include composition, temperature, and pressure. Phase boundary lines are derived that define the regions for planar and island growth in terms of composition-temperature and composition-pressure. Also derived is the roughening characteristic length as a function of temperature, pressure, and characteristic time. Our results can explain the literature data satisfactorily.