Effect of processing conditions on the growth of strained Si1-xGex layers on Si

Abstract

We investigate several factors that determine the surface morphology in heteroepitaxial growth of Si1-xGex films on Si, which include composition, temperature, and pressure. Phase boundary lines are derived that define the regions for planar and island growth in terms of composition-temperature and composition-pressure. Also derived is the roughening characteristic length as a function of temperature, pressure, and characteristic time. Our results can explain the literature data satisfactorily.