S-Space College of Engineering/Engineering Practice School (공과대학/대학원) Dept. of Mechanical Aerospace Engineering (기계항공공학부) Journal Papers (저널논문_기계항공공학부)
Ge composition in Si1-xGex films grown from SiH2Cl2/GeH4 precursors
- Suh, K. Y.; Lee, Hong H.
- Issue Date
- American Institute of Physics
- J. Appl. Phys. 88, 4044 (2000)
- CHEMICAL-VAPOR-DEPOSITION; SILICON-GERMANIUM; EPITAXIAL-GROWTH; ATMOSPHERIC-PRESSURE; GAS-PHASE; KINETICS; SI
- A simple model for the Ge composition in Si1-xGex films grown from SiH2Cl2/GeH4 precursors is developed on the basis of adsorption and desorption kinetics for the intermediate temperature range (600 degrees C < T < 900 degrees C). For this system, the solid phase composition of Ge, x, is related to the gas phase composition ratio of the two source gases, G, by x(2)/(1-x) = constantxG, which contrasts with the conventional relationship, x/(1-x) = constantxG, that is known for SiH4/GeH4 chemical vapor deposition. The proportionality constant depends not only on temperature but also on pressure. The model compares well with the experimental data in the literature.