S-Space College of Engineering/Engineering Practice School (공과대학/대학원) Dept. of Mechanical Aerospace Engineering (기계항공공학부) Journal Papers (저널논문_기계항공공학부)
Aging behavior of porous silicon electrochemically etched with the aid of Zn
- Suh, K. Y.; Kim, Y. S.; Lee, Hong H.
- Issue Date
- American Institute of Physics
- J. Appl. Phys. 90, 4485 (2001)
- Aging behavior of red, green, and blue photoluminescence from porous silicon formed by electrochemical etching aided with zinc has been studied over a 3 month time span. Time-resolved photoluminescence spectra and decay dynamics have revealed that there are two radiating states in Zn-aided porous silicon. One is the quantum confinement and the other is the oxygen-related defect. For green emission, the wavelength shifts from 520 to 420 nm and its photoluminescence spectra and decay behavior become very similar to those of blue emission.