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Low Temperature Chemical Vapor Deposition of (Ba, Sr)TiO3 Thin Films for High Density Dynamic Random Access Memory Capacitors

Cited 5 time in Web of Science Cited 4 time in Scopus
Authors
Joo, Jae-Hyun; Park, Jong-Bum; Kim, Younsoo; Lee, Kong-Soo; Lee, Jun-Sik; Roh, Jae-Sung; Kim, Jae Jeong
Issue Date
1999-02
Publisher
Japan Society of Applied Physics
Citation
Japanese Journal of Applied Physics 38 (1999) L195-L198
Keywords
CVDMOCVDlow temperaturethin filmuniformityelectrical properties
Abstract
(Ba, Sr)TiO3 (BST) films are deposited on 8-inch wafers by the metal organic chemical vapor deposition (MOCVD) technique at a temperature as low as 400°C to obtain conformal step coverage and prevent oxidation of the diffusion barrier of simple stacked capacitors. The problems of low temperature process (formation of protrusions, titanium deficiency, severe thickness deviation) could be successfully overcome by proper modification of the CVD system and process conditions. Retrofitting the vaporizer to obtain flash evaporation of the liquid chemical source and introducing N2O gas as an oxidant were highly effective for reducing the thickness deviation and titanium deficiency. The Pt/BST/Pt capacitor with BST films deposited at 400°C and post-annealed at 700°C for 30 min under nitrogen ambient shows excellent electrical properties (Tox∼6.6 Å, J∼1×10-7 A/cm2 @±1 V), which are satisfactory for application to high density dynamic random access memory (DRAM) capacitors beyond 256 Mbit generation.
ISSN
0021-4922
Language
English
URI
https://hdl.handle.net/10371/63255
DOI
https://doi.org/10.1143/JJAP.38.L195
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Chemical and Biological Engineering (화학생물공학부)Journal Papers (저널논문_화학생물공학부)
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