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Investigation of Copper Deposition in the Presence of Benzotriazole
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Jae Jeong | - |
dc.contributor.author | Kim, Soo-Kil | - |
dc.contributor.author | Bae, Jong-Uk | - |
dc.date.accessioned | 2010-04-15T07:19:39Z | - |
dc.date.available | 2010-04-15T07:19:39Z | - |
dc.date.issued | 2002-08 | - |
dc.identifier.citation | Thin Solid Films 415 (2002) 101-107 | en |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://hdl.handle.net/10371/63264 | - |
dc.description.abstract | The effect of benzotriazole (BTA) on copper electroplating for ultra large-scale integrated circuits interconnection was investigated. BTA exhibited both strong suppressing and brightening effects by modifying the nucleation and growth steps. Electroplating in the presence of BTA followed a random deposition mechanism rather than a selective or preferential deposition mechanism. As a result, the crystal orientation intensity and mean aggregates size of the electroplated copper with BTA were much smaller than those of BTA-free, which resulted in an increase in resistivity. The increased resistivity of the electroplated copper in the presence of BTA was recovered to approximately 2 μΩ-cm through annealing at 400 °C in a nitrogen atmosphere by grain growth and recrystallization. The amounts of carbon and nitrogen impurities from the BTA were below the detection limit of Auger electron spectroscopy. | en |
dc.language.iso | en | en |
dc.publisher | Elsevier | en |
dc.subject | Copper | en |
dc.subject | Electroplating | en |
dc.subject | Additive | en |
dc.subject | Annealing | en |
dc.title | Investigation of Copper Deposition in the Presence of Benzotriazole | en |
dc.type | Article | en |
dc.contributor.AlternativeAuthor | 김재정 | - |
dc.contributor.AlternativeAuthor | 김수길 | - |
dc.contributor.AlternativeAuthor | 배종욱 | - |
dc.identifier.doi | 10.1016/S0040-6090(02)00529-1 | - |
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