Browse

Corrosion in Aluminum Chemical Mechanical Planarization for Sub-Quarter Micron Dynamic Random Access Memory Devices

Cited 3 time in Web of Science Cited 4 time in Scopus
Authors
Kim, Jae Jeong; Kim, Jun Yong; Jeong, Chae Ho; Park, Nae Hak; Han, Sang Bum; Park, Jin Won; Lee, Won-Jun
Issue Date
2002-02
Publisher
Japan Society of Applied Physics
Citation
Japanese Journal of Applied Physics 41 (2002) 925-929
Keywords
chemical mechanical planarizationaluminumcorrosiondamascenehydrogen peroxidealumina
Abstract
In the Al chemical mechanical planarization (CMP) process, which is aimed at the application of Al damascene to sub-quarter-micron dynamic random access memory (DRAM) interconnection, corrosion has been the main focus of investigation. The corrosion characteristics vary accordingly to the deposition conditions of the Al and metal structures. Galvanic corrosion seemed to be the major corrosive mechanism at the Al interface. The dependency of corrosion on pattern size was also examined. To prevent corrosion, hydrogen peroxide treatment of the Al surface and reduction of the contact with deionized water were both highly effective. The Al damascene process was applied with the corrosion reduction method to Al lines down to 0.24 µm width, resulting in an approximate 9% decrease in the sheet resistance.
ISSN
0021-4922
Language
English
URI
https://hdl.handle.net/10371/63265
DOI
https://doi.org/10.1143/JJAP.41.925
Files in This Item:
There are no files associated with this item.
Appears in Collections:
College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Chemical and Biological Engineering (화학생물공학부)Journal Papers (저널논문_화학생물공학부)
  • mendeley

Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse