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Phase change behavior and electrical properties of SiO₂ doped Ge₂Sb₂Te? thin films for application in phase change random access memory
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- Authors
- Advisor
- 김형준
- Issue Date
- 2010
- Publisher
- 서울대학교 대학원
- Keywords
- Ge₂Sb₂Te? ; PRAM ; Chalcogenide materials ; Phase Change ; PCRAM ; Ge₂Sb₂Te? ; Co-sputtering ; SiO₂ ; SiO₂ doped Ge₂Sb₂Te? ; doping ; Thermal conductivity ; thermal conductivity ; Thermal efficiency ; thermal efficiency
- Description
- Thesis(doctors) --서울대학교 대학원 :재료공학부,2010.2.
- Language
- English
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000032467
https://hdl.handle.net/10371/63865
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