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Improvement of SiO₂4H-SiC interface quality in 4H-SiC metal-oxide-semiconductor capacitors
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- Authors
- Advisor
- 김형준
- Issue Date
- 2010
- Publisher
- 서울대학교 대학원
- Keywords
- 4H-탄화규소 ; 4H-SiC ; 채널이동도 ; channel mobility ; 계면결함준위 ; Interface trap density (Dit) ; 질화처리 ; Nitridation ; 적층형 게이트 산화막 ; stacking gate dielectric ; 반응방지막 ; reaction barrier layer
- Description
- Thesis(doctors) --서울대학교 대학원 :재료공학부,2010.2.
- Language
- English
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000032459
https://hdl.handle.net/10371/63872
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