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S-Space College of Engineering/Engineering Practice School (공과대학/대학원) Dept. of Electrical and Computer Engineering (전기·정보공학부) Theses (Ph.D. / Sc.D._전기·정보공학부)

Fin and Recess Channel MOSFET for High Speed and Low Power DRAM Cell
고속 저전력 디램 셀을 위한 핀과 리세스 혼합 채널 MOSFET

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Authors
송재영
Advisor
박병국
Issue Date
2010
Publisher
서울대학교 대학원
Keywords
핀과 리세스 혼합 채널 MOSFET (FiReFET) ; Fin and Recess Channel MOSFET (FiReFET) ; 함몰게이트 구조 ; buried-gate structure ; 소스 ; source ; 드레인 저항 ; drain resistance ; 게이트 유도 드레인 누설 (GIDL) ; Gate-Induced Drain Leakage (GIDL) ; 다이내믹 랜덤 액세스 메모리 (DRAM) ; Dynamic Random Access Memory (DRAM) ; 고속 ; high speed ; 저전력 ; low power
Description
Thesis(doctors) --서울대학교 대학원 :전기. 컴퓨터공학부,2010.2.
Language
English
URI
http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000032541

https://hdl.handle.net/10371/63984
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Theses (Ph.D. / Sc.D._전기·정보공학부)
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