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(The) study of SiO₂,Si₃N₄passivation layers for InSb photodiodes : 인듐안티모나이드 적외선 감지소자용 SiO₂,Si₃N₄절연막에 대한 연구

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Authors

이재열

Advisor
윤의준
Issue Date
2010
Publisher
서울대학교 대학원
Keywords
인듐 안티모나이드InSb적외선photodiode절연막sensor
Description
Thesis(masters) --서울대학교 대학원 :재료공학부,2010.2.
Language
English
URI
http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000033307

https://hdl.handle.net/10371/64790
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