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Growth of GaN epi-layer using AIN and GaN buffer layer on patterned sapphire substrate by metalorganic chemical vapor deposition (MOCVD) : 패턴 된 사파이어 기판 위에 AlN 중간층을 이용한 GaN 에피 박막 MOCVD 성장
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- Authors
- Advisor
- 윤의준
- Issue Date
- 2010
- Publisher
- 서울대학교 대학원
- Keywords
- 유기금속화학기상증착법 ; Metalorganic chemical vapor deposition (MOCVD) ; AlN 중간층 ; AlN buffer layer ; 패턴 된 사파이어 기판 ; Patterned sapphire substrates (PSSs) ; 측면 성장 ; Epitaxial lateral overgrowth (ELO) ; 응력 완화 ; Stress relaxation
- Description
- Thesis(masters) --서울대학교 대학원 :재료공학부,2010.2.
- Language
- English
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000033291
https://hdl.handle.net/10371/64804
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