Publications
Detailed Information
Effects of an added iodine source (C2H5I) on Ru Metalorganic Chemical Vapor Deposition
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Jae Jeong | - |
dc.contributor.author | Kim, Moon Soo | - |
dc.contributor.author | Yoon, Do Young | - |
dc.date.accessioned | 2010-05-12T04:49:19Z | - |
dc.date.available | 2010-05-12T04:49:19Z | - |
dc.date.issued | 2003 | - |
dc.identifier.citation | Chemical Vapor Deposition, 2003, 9(2), 105-109 | en |
dc.identifier.issn | 0948-1907 | - |
dc.identifier.uri | https://hdl.handle.net/10371/65980 | - |
dc.description.abstract | The effects of ethyl iodide (C2H5I) as an iodine source are investigated for Ru films grown on TiN/Ti/Si wafers by MOCVD using Ru-(EtCp)2 as a precursor. Although the introduction of the additional step of adsorbing C2H5I during the deposition is found not to affect the orientation of the ruthenium films deposited, the resistivity of films thinner than 40nm decreases by 20% or less. Moreover the introduction of iodine extends the surface-reaction-limited regime of the deposition to 400 °C on account of which an increased deposition rate and improved film properties can be expected. | en |
dc.language.iso | en | en |
dc.publisher | Wiley-Blackwell | en |
dc.subject | Deposition rates | en |
dc.subject | Iodine | en |
dc.subject | Ruthenium | en |
dc.subject | Surface roughness | en |
dc.title | Effects of an added iodine source (C2H5I) on Ru Metalorganic Chemical Vapor Deposition | en |
dc.type | Article | en |
dc.contributor.AlternativeAuthor | 김재정 | - |
dc.contributor.AlternativeAuthor | 김문수 | - |
dc.contributor.AlternativeAuthor | 윤두영 | - |
dc.identifier.doi | 10.1002/cvde.200390000 | - |
- Appears in Collections:
- Files in This Item:
- There are no files associated with this item.
Item View & Download Count
Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.