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catalytic behavior of MPSA(3-mercapto-1-propane sulfonic acid) on Cu electrodeposition and its effect on Cu film properties for CMOS device metallization.

Cited 69 time in Web of Science Cited 67 time in Scopus
Authors
Kim, Jae Jeong; Kim, Soo-Kil; Kim, Yong Shik
Issue Date
2003-01
Publisher
Elsevier
Citation
Journal of Electroanalytical Chemistry 542 (2003) 61-66
Keywords
ElectrodepositionAccelerationCopper3-Mercapto-1-propane sulfonic acid
Abstract
The effect of 3-mercapto-1-propane sulfonic acid (MPSA) on acidic copper electrodeposition for complementary metal oxide semiconductor (CMOS) metallization was characterized as an accelerator and brightener. Electrochemical and spectroscopic analyses revealed that MPSA significantly improved the rate-determining step (rds) of copper deposition through the oxidation of the thiol group to disulfide. Likewise, S–Cu bonding was detected in the subsequent adsorption of disulfide on the copper surface, with the thiolate layer responsible for the bright deposits. The surface-only contamination of S after deposition indicated the repetition of adsorption/reductive desorption of MPSA during copper deposition by which the continuous acceleration could be explained. The adsorption of disulfide was much preferred to that of the inhibiting molecules, which enabled the displacement of inhibiting molecule as reported in recent research. Nevertheless, the combined effect of preferred disulfide adsorption with the catalytic improvement of the rds by MPSA is useful in fully explaining the acceleration effect of MPSA. Annealing at 400 °C reduced the resistivity of copper film down to 2.0 μΩ cm.
ISSN
1572-6657
Language
English
URI
https://hdl.handle.net/10371/65981
DOI
https://doi.org/10.1016/S0022-0728(02)01450-X
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Chemical and Biological Engineering (화학생물공학부)Journal Papers (저널논문_화학생물공학부)
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