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Ruthenium Bottom Electrode Prepared by Electroplating for a High-density DRAM Capacitor

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dc.contributor.authorKwon, Oh Joong-
dc.contributor.authorCha, Seung Hwan-
dc.contributor.authorKim, Jae Jeong-
dc.date.accessioned2010-05-12T04:56:38Z-
dc.date.available2010-05-12T04:56:38Z-
dc.date.issued2004-01-09-
dc.identifier.citationJournal of the Electrochemical Society, 151, C127-C132en
dc.identifier.issn0013-4651-
dc.identifier.urihttps://hdl.handle.net/10371/65983-
dc.description.abstractThe possibility of Ru electroplating for application as the bottom electrode in high density dynamic random access memory
~DRAM! capacitors was investigated. Prior to Ru electroplating on a TiN substrate, HF cleaning and Pd activation were performed.
Removal of Ti oxide from the TiN substrate by HF treatment enabled Pd activation, which enhanced the nucleation of Ru
on TiN substrate. Optimized pretreatments led to a continuous Ru film deposition. The surface roughness was measured to be 4.4
nm at 45 nm Ru film on the bare substrate. Moreover Ru electroplating method was also applied to a capacitor node-type TiN
wafer. The deposition rate of Ru on the patterned wafer was the same as that on a bare wafer. The film showed 93% step coverage
and good adhesion, comparable to CVD Ru films.
en
dc.language.isoenen
dc.publisherElectrochemical Societyen
dc.subjectrutheniumen
dc.subjectmetallic thin filmsen
dc.subjectelectrodepositsen
dc.subjectelectroplatingen
dc.subjectDRAM chipsen
dc.subjectMIS capacitorsen
dc.titleRuthenium Bottom Electrode Prepared by Electroplating for a High-density DRAM Capacitoren
dc.typeArticleen
dc.contributor.AlternativeAuthor권오중-
dc.contributor.AlternativeAuthor차승환-
dc.contributor.AlternativeAuthor김재정-
dc.identifier.doi10.1149/1.1637900-
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Chemical and Biological Engineering (화학생물공학부)Journal Papers (저널논문_화학생물공학부)
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