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Effect of Organic Additives on Ceria Slurry in Shallow Trench Isolation Chemical Mechanical Planarization
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang, Min Cheol | - |
dc.contributor.author | Kim, Jae Jeong | - |
dc.contributor.author | Moon, Doo-Kyung | - |
dc.date.accessioned | 2010-05-12T05:02:21Z | - |
dc.date.available | 2010-05-12T05:02:21Z | - |
dc.date.issued | 2005-08-05 | - |
dc.identifier.citation | Japanese Journal of Applied Physics 44(2005) 5949–5952 | en |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://hdl.handle.net/10371/65986 | - |
dc.description.abstract | An increase in the removal selectivity between silicon oxide and silicon nitride was attempted by adding organic additives to a
ceria slurry for the application of shallow trench isolation (STI) chemical mechanical planarization (CMP). The protection behavior of poly(acrylic acid) (PAA) and the acceleration behavior of RE-610 in a ceria slurry were studied. PAA served as a protector of the silicon nitride due to the change in zeta potential. RE-610 worked as a hydration accelerator of the silicon oxide. When the two additives were added to the ceria slurry, the removal selectivity increased to 31 : 1. Moreover, PAA improved the stability of the ceria slurry. | en |
dc.language.iso | en | en |
dc.publisher | Japan Society of Applied Physics | en |
dc.subject | CMP | en |
dc.subject | ceria | en |
dc.subject | selectivity | en |
dc.subject | zeta potential | en |
dc.subject | hydration | en |
dc.title | Effect of Organic Additives on Ceria Slurry in Shallow Trench Isolation Chemical Mechanical Planarization | en |
dc.type | Article | en |
dc.contributor.AlternativeAuthor | 강민철 | - |
dc.contributor.AlternativeAuthor | 김재정 | - |
dc.contributor.AlternativeAuthor | 문두경 | - |
dc.identifier.doi | 10.1143/JJAP.44.5949 | - |
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