Publications
Detailed Information
Seedless Fill - up of the Damascene Structure Only by Copper Electroless Plating
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Jae Jeong | - |
dc.contributor.author | Cha, Seung Hwan | - |
dc.contributor.author | Lee, Young-Soo | - |
dc.date.accessioned | 2010-05-12T05:26:31Z | - |
dc.date.available | 2010-05-12T05:26:31Z | - |
dc.date.issued | 2003-08-01 | - |
dc.identifier.citation | Japanese Journal of Applied Physics 42(2003) L953-L955 | en |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://hdl.handle.net/10371/65990 | - |
dc.description.abstract | We attempted to fill up seedlessly the damascene pattern in ULSI interconnection only by Cu electroless plating. Cu2O
content, which was generally detected in Cu electroless plating, was removed through controlling the plating temperature. Optimum control in electrolyte concentration and plating temperature leaded to good characteristics of electrolessly plated Cu with 2.1 m cm resistivity, 8.9 nm rms roughness at 160 nm thickness, good adhesion and 10 nm/min deposition rate. The optimum condition was successfully applied to a damascene pattern with aspect ratio of 3 and via size of 0.13 mm without void and seam. | en |
dc.language.iso | en | en |
dc.publisher | Japan Society of Applied Physics | en |
dc.subject | copper | en |
dc.subject | electroless | en |
dc.subject | damascene | en |
dc.subject | copper oxide | en |
dc.subject | temperature | en |
dc.title | Seedless Fill - up of the Damascene Structure Only by Copper Electroless Plating | en |
dc.type | Article | en |
dc.contributor.AlternativeAuthor | 김재정 | - |
dc.contributor.AlternativeAuthor | 차승환 | - |
dc.contributor.AlternativeAuthor | 이영수 | - |
dc.identifier.doi | 10.1143/JJAP.42.L953 | - |
- Appears in Collections:
- Files in This Item:
- There are no files associated with this item.
Item View & Download Count
Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.