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Oxidation Resistive Cu Films by Room Temperature Surface Passivation with Thin Ag Layer

Cited 12 time in Web of Science Cited 11 time in Scopus
Authors
Kim, Jae Jeong; Kim, Yong Shik; Kim, Soo-Kil
Issue Date
2002-12-10
Publisher
Electrochemical Society
Citation
Electrochemical and Solid-State Letters, 6 (2), C17-C20
Keywords
coppersurface diffusionoxidationpassivationannealing, silverintegrated circuit interconnectionscorrosion protective coatingselectrodeposits
Abstract
A displacement-deposited Ag layer was investigated as an oxidation barrier in damascene Cu structure for high performance
interconnection. A 40 nm thick bright and continuous Ag film was formed at the surface of electrodeposited Cu by immersing the
copper film into the silver displacement solution. The Ag film at Cu surface significantly blocked oxygen diffusion into the Cu film
and retarded oxidation. More importantly, an elevated barrier performance for oxygen diffusion through elimination and stuffing
of grain boundaries of Cu was observed upon annealing in a 400°C N2 atmosphere. Outward Cu diffusion through Ag layer
controlled Cu oxidation when the surface was passivated with Ag layer.
ISSN
1099-0062
Language
English
URI
https://hdl.handle.net/10371/66130
DOI
https://doi.org/10.1149/1.1534732
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Chemical and Biological Engineering (화학생물공학부)Journal Papers (저널논문_화학생물공학부)
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