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Additive-free Superfilling in Damascene Cu Electrodeposition using Microcontact Printing

DC Field Value Language
dc.contributor.authorKim, Soo-Kil-
dc.contributor.authorKim, Jae Jeong-
dc.date.accessioned2010-05-14T05:43:54Z-
dc.date.available2010-05-14T05:43:54Z-
dc.date.issued2004-08-04-
dc.identifier.citationElectrochemical and Solid-State Letters, 7 (9), C101-C103en
dc.identifier.issn1099-0062-
dc.identifier.urihttps://hdl.handle.net/10371/66131-
dc.description.abstractTo avoid complications brought about by employing organic additives, microcontact printing using a flat stamp was used in
forming trench-selective Cu superfilling on damascene structure. Self-assembled monolayers of 1-decanethiol transferred on top
surface of the trench could withstand the H2SO4 electrolyte and were used as a barrier for current transfer below a certain potential
that was not yet dominated by the tunneling current. Subsequent electrodeposition on the printing area was successfully inhibited.
The resulting filling profile was a defect-free superfilling with bumps on top. This is comparable to the three-additive system
consisting of accelerator and two-component suppressor.
en
dc.language.isoenen
dc.publisherElectrochemical Societyen
dc.subjectcopperen
dc.subjectelectrodepositionen
dc.subjectprintingen
dc.subjectorganic compoundsen
dc.subjectmonolayersen
dc.subjectintegrated circuit interconnectionsen
dc.titleAdditive-free Superfilling in Damascene Cu Electrodeposition using Microcontact Printingen
dc.typeArticleen
dc.contributor.AlternativeAuthor김수길-
dc.contributor.AlternativeAuthor김재정-
dc.identifier.doi10.1149/1.1778932-
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