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Additive-free Superfilling in Damascene Cu Electrodeposition using Microcontact Printing
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Soo-Kil | - |
dc.contributor.author | Kim, Jae Jeong | - |
dc.date.accessioned | 2010-05-14T05:43:54Z | - |
dc.date.available | 2010-05-14T05:43:54Z | - |
dc.date.issued | 2004-08-04 | - |
dc.identifier.citation | Electrochemical and Solid-State Letters, 7 (9), C101-C103 | en |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.uri | https://hdl.handle.net/10371/66131 | - |
dc.description.abstract | To avoid complications brought about by employing organic additives, microcontact printing using a flat stamp was used in
forming trench-selective Cu superfilling on damascene structure. Self-assembled monolayers of 1-decanethiol transferred on top surface of the trench could withstand the H2SO4 electrolyte and were used as a barrier for current transfer below a certain potential that was not yet dominated by the tunneling current. Subsequent electrodeposition on the printing area was successfully inhibited. The resulting filling profile was a defect-free superfilling with bumps on top. This is comparable to the three-additive system consisting of accelerator and two-component suppressor. | en |
dc.language.iso | en | en |
dc.publisher | Electrochemical Society | en |
dc.subject | copper | en |
dc.subject | electrodeposition | en |
dc.subject | printing | en |
dc.subject | organic compounds | en |
dc.subject | monolayers | en |
dc.subject | integrated circuit interconnections | en |
dc.title | Additive-free Superfilling in Damascene Cu Electrodeposition using Microcontact Printing | en |
dc.type | Article | en |
dc.contributor.AlternativeAuthor | 김수길 | - |
dc.contributor.AlternativeAuthor | 김재정 | - |
dc.identifier.doi | 10.1149/1.1778932 | - |
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