S-Space College of Engineering/Engineering Practice School (공과대학/대학원) Dept. of Chemical and Biological Engineering (화학생물공학부) Journal Papers (저널논문_화학생물공학부)
Optimization of a Pretreatment for Copper Electroless Deposition on Ta Substrates
|dc.contributor.author||Lee, Chang Hwa||-|
|dc.contributor.author||Cha, Seung Hwan||-|
|dc.contributor.author||Kim, Ae Rim||-|
|dc.contributor.author||Kim, Jae Jeong||-|
|dc.identifier.citation||Journal of the Electrochemical Society, 154(3), D182-D187||en|
|dc.description.abstract||We investigated pretreatment methods for Cu electroless deposition on a Ta substrate. The native oxide on the substrate was
effectively etched by the addition of HNO3 to a HF diluted solution and this was confirmed though X-ray photoelectron spectroscopy
and chronopotentiometry. To form the Pd catalyst for Cu electroless deposition, a two-step Sn sensitization and Pd
activation was carried out. The oxide removal enhanced the adsorption of the Sn ions on the Ta substrate and led to well
distributed Pd clusters through Pd activation. By measuring the resistivity of the film, the Sn sensitization time and the Pd
activation time were optimized through changes in the incubation time, at which the sheet resistance abruptly decreased by the film
formation via the coalescence of Cu grains. The resistivity of the Cu electroless film deposited using the optimized pretreatment
conditions was 3.59 cm, which was further reduced to 2.7 cm through an annealing process.
|dc.description.sponsorship||This work was supported by KOSEF through the Research Center
for Energy Conversion and Storage RCECS , Dongbu Electronics,
and by the Institute of Chemical Processes ICP .
|dc.title||Optimization of a Pretreatment for Copper Electroless Deposition on Ta Substrates||en|
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