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Rubidium-Carbonate-Doped 4,7-Diphenyl-1,10-phenanthroline Electron Transporting Layer for High-Efficiency p-i-n Organic Light Emitting Diodes
Cited 43 time in
Web of Science
Cited 47 time in Scopus
- Authors
- Issue Date
- 2009-01
- Publisher
- Electrochemical Society
- Citation
- Electrochem. Solid-State Lett., 12, J8 (2009)
- Keywords
- organic light emitting diodes ; organic semiconductors ; photoelectron spectra ; p-i-n diodes
- Abstract
- We investigated the electrical properties and charge transport mechanisms of a rubidium-carbonate (Rb2CO3)-doped 4,7-diphenyl-1,10-phenanthroline (Bphen) electron transporting layer (ETL). The electron-only devices and photoemission spectroscopy analysis revealed that the formation of doping-induced gap states dominantly contributes to the improvement of carrier transport characteristics of the doped system. High-efficiency green phosphorescent p-doping/intrinsic/n-doping (p-i-n) organic light emitting diodes were demonstrated using the Rb2CO3-doped Bphen ETL and rhenium oxide (ReO3)-doped N,N-diphenyl-N,N-bis(1,1-biphenyl)-4,4-diamine hole transporting layer, exhibiting an external quantum efficiency of 19.2%, power efficiency of 76 lm/W, and low operation voltage of 3.6 V at 1000 cd/m2.
- ISSN
- 1099-0062
- Language
- English
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