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Air stable C60 based n-type organic field effect transistor using a perfluoropolymer insulator
Cited 35 time in
Web of Science
Cited 40 time in Scopus
- Authors
- Issue Date
- 2008-02-29
- Publisher
- Elsevier
- Citation
- Organic Electronics 9 (481) (2008)
- Keywords
- Organic field effect transistor ; n-Type ; C60 ; Air stable ; Perfluorinated polymer gate insulator
- Abstract
- Air stable n-type organic field effect transistors (OFETs) based on C60 are realized using a perfluoropolymer as the gate dielectric layer. The devices showed the field-effect mobility of 0.049 cm2/V s in ambient air. Replacing the gate dielectric material by SiO2 resulted in no transistor action in ambient air. Perfluorinated gate dielectric layer reduces interface traps significantly for the n-type semiconductor even in air.
- ISSN
- 1566-1199
- Language
- English
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