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Charge Amplifier With an Enhanced Frequency Response for SPM-Based Data Storage

DC Field Value Language
dc.contributor.authorLee, Hyunjoong-
dc.contributor.authorWoo, Jong-Kwan-
dc.contributor.authorNam, Hyo-Jin-
dc.contributor.authorJin, Won-Hyeog-
dc.contributor.authorJeong, Moongi-
dc.contributor.authorKim, Young-Sik-
dc.contributor.authorShin, Jin-Koog-
dc.contributor.authorKim, Suhwan-
dc.date.accessioned2010-11-08T10:19:06Z-
dc.date.available2010-11-08T10:19:06Z-
dc.date.issued2010-09-
dc.identifier.citationIEEE Transactions on Circuits and Systems Part 2 Express Briefs Vol. 57, No. 9, pp. 691-695en
dc.identifier.issn1549-7747-
dc.identifier.urihttps://hdl.handle.net/10371/70057-
dc.description.abstractStorage systems based on scanning probe microscopy
incorporate an array of thermopiezoelectric cantilevers that require
charge amplifiers with a wide frequency response but low
power consumption.We use an improved frequency compensation
method to enhance the in-band frequency response without requiring
any additional power. Measurements show that the prototype
chip draws the same 68 μA at 1.8 V as an unmodified design but
has a closed-loop frequency response that is ten times greater. The
chip was fabricated in a 0.18-μmstandard CMOS process, and the
charge amplifier core occupies 0.042 mm2.
en
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.subjectCMOSen
dc.subjectdata storageen
dc.subjectCharge amplifieren
dc.subjectfrequency compensationen
dc.subjectlead zirconate titanate (PZT)en
dc.subjectmicroelectromechanical system (MEMS)en
dc.subjectscanning probe microscopy (SPM)en
dc.subjectthermopiezoelectric cantileveren
dc.titleCharge Amplifier With an Enhanced Frequency Response for SPM-Based Data Storageen
dc.typeArticleen
dc.contributor.AlternativeAuthor이현중-
dc.contributor.AlternativeAuthor우종관-
dc.contributor.AlternativeAuthor남효진-
dc.contributor.AlternativeAuthor진원혁-
dc.contributor.AlternativeAuthor정문기-
dc.contributor.AlternativeAuthor김영식-
dc.contributor.AlternativeAuthor신진국-
dc.contributor.AlternativeAuthor김수환-
dc.identifier.doi10.1109/TCSII.2010.2056030-
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