S-Space College of Engineering/Engineering Practice School (공과대학/대학원) Dept. of Material Science and Engineering (재료공학부) Journal Papers (저널논문_재료공학부)
Low driving voltage and high stability organic light-emtting diodes with rhenium oxide-doped hole transporting layer
- Leem, Dong-Seok; Park, Hyung-Dol; Kang, Jae-Wook; Lee, Jae-Hyun; Kim, Ji Whan; Kim, Jang-Joo
- Issue Date
- American Institute of Physics
- Appl. Phys. Lett. 91, 011113 (2007)
- The authors report a promising metal oxide-doped hole transporting layer (HTL) of rhenium oxide (ReO3)-doped N,N-diphenyl-N,N-bis (1,1-biphenyl)-4,4-diamine (NPB). The tris(8-hydroxyquinoline) aluminum-based organic light-emitting diodes with ReO3-doped NPB HTL exhibit driving voltage of 5.2–5.4 V and power efficiency of 2.2–2.3 lm/W at 20 mA/cm2, which is significantly improved compared to those (7.1 V and 2.0 lm/W, respectively) obtained from the devices with undoped NPB. Furthermore, the device with ReO3-doped NPB layer reveals the prolonged lifetime than that with undoped NPB. Details of ReO3 doping effects are described based on the UV-Vis absorption spectra and characteristics of hole-only devices.
- 0003-6951 (print)